BB833 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units)

BB 833
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Reverse current
IR
VR = 30 V
VR = 30 V, TA = 85 ˚C
Diode capacitance
CT
f = 1 MHz,VR = 1 V
VR = 28 V
Capacitance ratio
CT1
f = 1 MHz, VR = 1 V, 28 V
CT28
Capacitance matching
∆CT
f = 1 MHz, VR = 1 V … 28 V
CT
Series resistance
rs
CT = 9 pF, f = 470 MHz
Series inductance
Ls
Diode capacitance CT = f (VR)
f = 1 MHz
min.
–
–
8.5
0.6
11
–
–
–
Values
Unit
typ.
max.
nA
–
20
–
500
pF
9.3
10
0.75
0.9
12.4
–
–
–
3
%
1.8
–
Ω
–
–
nH
Semiconductor Group
2