BB831 Datasheet, PDF(2/3 Page) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)

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BB831 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)

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BB 831

Electrical Characteristics at TA = 25Â°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Reverse current

VR = 30 V

Reverse current

VR = 30 V, TA = 85 Â°C

20 nA

500

AC characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 28 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

Capacitance matching

VR = 1 V, VR = 28 V, f = 1 MHz

Series resistance

VR = 1 V, f = 100 MHz

Series inductance

CT1/CT28

7.8

0.85

7.8

8.8

1.02

8.6

9.8

1.2

9.5 -

âCT /CT

-â¦

1.8

- nH

1) In-line matching. For details please refer to Application Note 047

Semiconductor Group

Aug-03-1998

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