BB814 Datasheet, PDF (2/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Dual Capacitance Diode

BB 814
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Reverse current
IR
VR = 16 V
VR = 16 V, TA = 60 ˚C
Diode capacitance
CT
f = 1 MHz¹⁾
VR = 2 V
VR = 8 V
Capacitance ratio
CT2
VR = 2 V, 8 V, f = 1 MHz
CT8
Capacitance matching
∆CT
VR = 2 V, 8 V
CT
Series resistance
r_S
VR = 2 V, f = 100 MHz
Q factor
Q
VR = 2 V, f = 100 MHz
1) _{Capacitance groups, coded 1, 2}
Code
1
2
CT (2 V)
43 … 45
44.5 … 46.5
CT (8 V)
Unit
19.1 … 21.95 pF
19.75 … 22.7 ^pF
min.
Values
Unit
typ.
max.
nA
–
–
20
–
–
200
pF
43
44.75 46.5
19.1
20.8
22.7
2.05
2.15
2.25
–
–
–
3
%
–
0.18
–
Ω
–
200
–
–
Semiconductor Group
2