BB804 Datasheet, PDF (2/3 Pages) NXP Semiconductors – VHF variable capacitance double diode

BB 804
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Reverse current
IR
VR = 16 V
VR = 16 V, TA = 60 ˚C
Diode capacitance
CT
VR = 2 V, f = 1 MHz
Capacitance ratio
CT2
VR = 2 V, 8 V, f = 1 MHz
CT8
Series resistance
rs
VR = 2 V, f = 100 MHz
Q factor
Q
VR = 2 V, f = 100 MHz
Temperature coefficient of
TCC
diode capacitance
VR = 2 V, f = 1 MHz
Diode capacitance¹⁾
CT
VR = 2 V, f = 1 MHz
Subgroups: 0
1
2
3
4
min.
–
–
42
1.65
–
–
–
Values
Unit
typ.
max.
nA
–
20
–
200
–
47.5
pF
1.71
–
–
0.18
–
Ω
200
–
–
330
–
ppm/K
42
–
43
–
44
–
45
–
46
–
pF
43.5
44.5
45.5
46.5
47.5
1) _{The capacitance subgroup is marked by the subgroup number printed on the component and the package}
label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
Semiconductor Group
2