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| BB669 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) | |||
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BB 669
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
IR
-
-
10 nA
IR
-
- 200
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
pF
51 56.5 61.5
39.6 43.4 47.2
2.6 2.8
3
2.5 2.7 2.9
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
CT2/CT25
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT28
Capacitance ratio 1)
VR = 1 V, VR = 28 V, f = 1 MHz
âCT/C T
Series resistance
rs
VR = 8 V, f = 470 MHz
Series inductance
Ls
1) In-line matching. For details please refer to Application Note 047
14.5
18
-
-
-
15.5
20.9
-
0.85
1.4
17 -
23.3
2%
-â¦
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Jul1-91908--11919-081
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