 English |
|
|
|
|
|
|
|
| BB664 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) | |||
| |||
| ◁ |
BB 664
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
IR
-
-
10 nA
IR
-
- 100
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
pF
39 41.8 44.5
29.4 31.85 34.2
2.5 2.7 2.85
2.4 2.55 2.75
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1)
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
VR = 5 V, f = 470 MHz
Series inductance
CT2/CT25 11 11.8 12.5 -
CT1/CT28 15.2 16.4 17.5
âCT/C T
-
-
2%
rs
-
0.6 0.75 â¦
Ls
-
0.6
- nH
1) In-line matching. For details please refer to Application Note 047
SSeemmicioconndduuctcotor rGGrorouupp
22
Jul1-91908--11919-081
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese