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| BB644 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) | |||
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BB 644
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
IR
-
-
10 nA
IR
-
- 100
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
pF
39 41.8 44.5
29.4 31.85 34.2
2.5 27 2.85
2.4 2.55 2.75
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
CT2/CT25
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT28
Capacitance ratio 1)
VR = 1 V, VR = 28 V, f = 1 MHz
âCT/C T
Series resistance
rs
VR = 1 V, f = 1 GHz
Series inductance
Ls
1) In-line matching. For details please refer to Application Note 047
11
15.2
-
-
-
11.8
16.4
-
0.6
1.8
12.5 -
17.5
2%
0.75 â¦
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Jul1-90998--11919-081
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