BB641 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)

BB 641
Electrical Characteristics
at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, 28 V, f = 1 MHz
Capacitance matching
V_R = 1 V … 28 V, f = 1 MHz
Series resistance
C_T = 30 pF, f = 100 MHz
Series inductance
I_R
C_T
C_T1/C_T28
∆C_T/C_T
r_S
L_s
min.
–
–
62
2.65
22
–
–
–
Value
Unit
typ.
max.
nA
–
20
–
200
pF
69
76
2.88
3.1
–
24
–
%
–
2.5
Ω
1.55
–
1.8
–
nH
Package Outline
SOD-323
Dimensions in mm
Semiconductor Group
2