BB640 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I)

BB 640
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Reverse current
IR
VR = 30 V
VR = 30 V, TA = 85 ˚C
Diode capacitance,
CT
f = 1 MHz
VR = 1 V
VR = 28 V
Capacitance ratio
CT1
VR = 1 V, 28 V, f = 1 MHz
CT28
Capacitance matching
∆CT
VR = 1 V … 28 V, f = 1 MHz
CT
Series resistance
rs
CT = 30 pF, f = 100 MHz
Series inductance
LS
Diode capacitance CT = f (VR)
f = 1 MHz
min.
–
–
62
2.9
19.5
–
–
–
Values
Unit
typ.
max.
nA
–
10
–
200
pF
–
76
–
3.4
–
25
–
–
2.5
%
1.15
–
Ω
2
–
nH
Semiconductor Group
2