BB639 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners)

BB 639
Electrical Characteristics
at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 1 V, 28 V, f = 1 MHz
Capacitance matching
V_R = 1 V … 28 V, f = 1 MHz
Series resistance
C_T = 12 pF, f = 100 MHz
Series inductance
I_R
C_T
C_T1/C_T28
∆C_T/C_T
r_S
L_S
min.
–
–
36
2.4
13.5
–
–
–
Value
Unit
typ. max.
nA
–
10
–
200
pF
38.3 42
2.6
2.9
–
14.7 –
%
–
2.5
Ω
0.65 –
2
–
nH
Semiconductor Group
2