|
BB620 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) | |||
|
◁ |
BB 620
Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
Symbol
Reverse current
IR
VR = 30 V
VR = 30 V, TA = 85 ËC
Diode capacitance
CT
f = 1 MHz
VR = 1 V
VR = 28 V
Capacitance ratio
CT1
VR = 1 V, 28 V; f = 1 MHz
CT28
Capacitance matching
âCT
VR = 1 V ⦠28 V, f = 1 MHz
CT
Series resistance
rS
CT = 30 pF; f = 100 MHz
Series inductance
LS
min.
â
â
62
2.9
19.5
â
â
â
Values
Unit
typ.
max.
nA
â
10
â
200
pF
â
76
â
3.4
â
25
â
â
2.5
%
1.3
â
â¦
2.8
â
nH
Diode capacitance CT = f (VR)
f = 1 MHz
Semiconductor Group
2
|