BB619 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners)

BB 619
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Reverse current
IR
VR = 30 V
VR = 30 V, TA = 85 ˚C
Diode capacitance, f = 1 MHz
CT
VR = 1 V
VR = 28 V
Capacitance ratio
CT1
VR = 1 V, 28 V; f = 1 MHz
CT28
Capacitance matching
∆CT
VR = 1 V … 28 V; f = 1 MHz
CT
Series resistance
rs
CT = 12 pF, f = 100 MHz
Series inductance
Ls
Diode capacitance CT = f (VR)
f = 1 MHz
min.
–
–
36
2.4
13.5
–
–
–
Values
Unit
typ.
max.
nA
–
10
–
200
pF
38.7
42
2.6
2.9
14.9
–
–
–
2.5
%
0.6
–
Ω
2
–
nH
Semiconductor Group
2