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| BB535 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance) | |||
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BB 535
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
VR = 30 V, TA = 25 °C
VR = 30 V, TA = 85 °C
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching
VR = 1 ... 28 V, f = 1 MHz
Series resistance
VR = 3 V, f = 470 MHz
Series inductance
IR
-
-
-
-
nA
10
200
CT
pF
17.5
18.7
20
14.01 15
16.1
2.05
2.24
2.4
1.9
2.1
2.3
CT2/CT25
6
-
6.7
7.5
CT1/CT28
8.2
8.9
9.8
âCT/CT
-
-
%
2.5
rs
-
â¦
0.55
0.65
Ls
-
2
-
nH
Semiconductor Group
2
Jan-08-1997
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