BAV74 Datasheet, PDF (2/4 Pages) NXP Semiconductors – High-speed double diode

BAV 74
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 100 mA
Reverse current
VR = 50 V
VR = 50 V, TA = 150 ˚C
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
Test circuit for reverse recovery time
Symbol
Values
Unit
min. typ. max.
V(BR)
50
–
VF
–
–
IR
–
–
–
–
–
V
1
µA
0.1
100
CD
–
–
2
pF
trr
–
–
4
ns
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
Oscillograph: R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
Semiconductor Group
2