BAT18- Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)

BAT 18...
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Forward voltage
VF
IF = 100 mA
Reverse current
IR
VR = 20 V
VR = 20 V, TA = 60 ˚C
Diode capacitance
CT
VR = 20 V, f = 1 MHz
Forward resistance
rf
IF = 5 mA, f = 100 MHz
Series inductance
LS
min.
–
–
–
–
–
–
Values
Unit
typ.
max.
0.38
1.2
V
nA
–
20
–
200
0.75
1
pF
0.4
0.7
Ω
2
–
nH
Diode capacitance CT = f (VR)
f = 1 MHz
Forward resistance rf = f (IF)
f = 100 MHz
Semiconductor Group
2