BAT17-07 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching)

BAT 17-07
Electrical Characteristics
at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Breakdown voltage
I_R = 10 µA
V_(BR)
Reverse current
I_R
V_R = 3 V
V_R = 3 V, T_A = 60 °C
V_R = 4 V
Forward voltage
V_F
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
Diode capacitance
C_T
V_R = 0 V f = 1 MHz
Differential forward resistance r_S
I_F = 5 mA, f = 10 kHz
min.
4
–
–
–
200
750
350
–
–
Value
Unit
typ.
max.
V
–
–
µA
–
0.25
–
1.25
–
10
mV
275
350
340
450
425
600
pF
0.75
1
Ω
8
15
Semiconductor Group
2