BAT14-D Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier)

BBAATT1144- -…...D
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
IR = 10 µA
V(BR)
4
Diode capacitance
VR = 0, f = 1 MHz
CT
BAT 14-020 D
–
BAT 14-050 D
–
BAT 14-090 D
–
BAT 14-110 D
–
Forward voltage
IF = 1 mA
IF = 10 mA
VF
BAT 14-020 D
–
BAT 14-050 D
–
BAT 14-090 D
–
BAT 14-110 D
–
BAT 14-020 D
–
BAT 14-050 D
–
BAT 14-090 D
–
BAT 14-110 D
–
Single sideband noise figure
FSSB
FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
f = 3.0 GHz
BAT 14-020 D
–
f = 6.0 GHz
BAT 14-050 D
–
f = 9.3 GHz
BAT 14-090 D
–
f = 16 GHz
BAT 14-110 D
–
Differential forward resistance
rf
IF = 10 mA
BAT 14-020 D
–
BAT 14-050 D
–
IF = 50 mA
BAT 14-090 D
–
BAT 14-110 D
–
V
–
–
pF
0.30 0.35
0.20 0.25
0.14 0.15
0.10 0.12
V
0.45 –
0.47 –
0.49 –
0.50 –
0.55 –
0.57 –
0.60 –
0.65 –
dB
6.0 –
6.5 –
6.5 –
7.0 –
Ω
3.5 –
4.0 –
7.0 –
10.0 –
Semiconductor Group
2