BAT14-099R Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon Crossover Ring Quad Schottky Diode

BAT 14-099R
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Forward voltage
VF
IF = 1 mA
IF = 10 mA
Forward voltage matching¹⁾
∆VF
IF = 10 mA
Diode capacitance
CT
VR = 0, f= 1 MHz
Forward resistance
RF
IF = 10 mA / 50 mA
min.
–
–
–
–
–
Values
Unit
typ.
max.
V
0.4
–
0.48
–
–
20
mV
0.38
–
pF
5.5
–
Ω
Forward current IF = f (VF)
Forward current IF = f (TS; TA*)
*Package mounted on alumina
1) _{∆VF is the difference between the lowest and the highest VF in the component.}
Semiconductor Group
2