BAT14-03W Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)

BAT 14-03W
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I_(BR) = 5 µA
Forward voltage
I_F = 1 mA
I_F = 10 mA
Diode capacitance
V_R = 0 , f = 1 MHz
Differential forward resistance
I_F 10mA/ 50 mA
V_(BR)
V
4
-
-
V_F
0.36
0.43
0.52
0.48
0.55
0.66
C_T
-
pF
0.22
0.35
R_F
-
Ω
5.5
-
Diode capacitance C_T = f (V_R)
f = 1MHz
0.50
pF
C_T ^0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_R
Semiconductor Group
2
Mar-01-1996