BAS70W Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS 70W
Electrical Characteristics
at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Breakdown voltage
I_(BR) = 10 µA
Forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 15 mA
Reverse current
V_R = 50 V
V_R = 70 V
Diode capacitance
V_R = 0 V, f = 1 MHz
Charge carrier life time
I_F = 25 mA
Differential forward resistance
I_F = 10 mA, f = 10 kHz
Series inductance
V_(BR)
V_F
I_R
C_T
τ
r_f
L_S
min.
70
300
600
750
–
–
–
–
–
–
Value
Unit
typ.
max.
V
–
–
mV
375
410
705
750
880
1000
µA
–
0.1
–
10
pF
1.5
2
ps
–
100
Ω
34
–
2
–
nH
Semiconductor Group
2