BAS70 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS 70
Electrical Characteristics
Table 2
DC Characteristics at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Reverse current 1, V_R = 70 V
I_R1
Reverse current 2, V_R = 56 V
I_R2
Forward voltage 1, I_F1 = 1 mA
V_F1
Forward voltage 2, I_F2 = 10 mA V_F2
Forward voltage 3, I_F3 = 15 mA V_F3
Differential forward resistance ²⁾ R_FD
I_F2 = 10 mA, I_F3 = 15 mA
-
-
2
-
-
0.1
0.30 0.38 0.44
0.60 0.70 0.78
0.80 0.85 1.00
24
30
32
2) _{RFD = -5----´-}^D_----^V_1---0-^F_{---Ð---3-W}
Table 3
AC Characteristics at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Total capacitance,
V_R = 0 V, f = 1 MHz
C_T
1.2
1.5
2.0
Unit
mA
mA
V
V
V
W
Unit
pF
Semiconductor Group
2
Draft A03 1998-04-01