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| BAS70-04S Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) | |||
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BAS 70-04S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 50 V
VR = 70 V
V(BR)
IR
70
-
-V
µA
-
-
0.1
-
-
10
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
VF
mV
300 375 410
600 705 750
750 880 1000
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Charge carrier life time
IF = 25 mA
Forward resistance
IF = 10 mA, f = 10 kHz
CT
-
1.6
2 pF
Ï
-
- 100 ps
rf
-
30
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SSeemmicioconndduuctcotor rGGrorouupp
22
Sep-109798-1-1919-081
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