BAS40W Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS 40W
Electrical Characteristics
at T_A = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Breakdown voltage
I_(BR) = 10 µA
V_(BR)
40
Forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 15 mA
V_F
250
350
600
Reverse current
V_R = 30 V
V_R = 40 V
I_R
–
–
Diode capacitance
V_R = 0 V, f = 1 MHz
C_T
–
Charge carrier life time I_F = 25 mA τ
–
Differential forward resistance
R_F
I_F = 10 mA, f = 10 kHz
–
Series inductance
L_S
–
Value
Unit
typ.
max.
V
–
–
mV
310
380
450
500
720
1000
µA
–
1
–
10
pF
3
5
10
–
ps
Ω
10
–
2
–
nH
Semiconductor Group
2