BA596 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – Silicon PIN Diode

BA 596
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Forward voltage
VF
IF = 50 mA
Reverse current
IR
VR = 50 V
Diode capacitance
CT
f = 1 MHz, VR = 50 V
f= 100 MHz, VR = 0 V
Forward resistance
rf
f = 100 MHz
IF = 10 µA
IF = 1 mA
IF = 10 mA
Zero bias conductance
gp
f = 100 MHz, VR = 0 V
Series inductance
LS
min.
–
–
–
–
–
–
6.5
–
–
Values
Unit
typ.
max.
–
1.15
V
–
50
nA
pF
0.23
0.35
0.2
–
Ω
2400 –
58
–
7.8
10
40
–
µS
2
–
nH
Diode capacitance CT = f (VR)
f = 1 MHz / f = 100 MHz
Forward resistance rf = f (IF)
f = 100 MHz