TLE4923 Datasheet, PDF (15/18 Pages) Siemens Semiconductor Group – Dynamic Differential Hall Effect Sensor IC

TLE 4923
Hysteresis versus Temperature
1.6
mT
∆B _HY
1.4
AED02477
typ
1.2
∆B_HY = ∆B_RP ∆B_OP
f = 200 Hz
1.0
Delay Time¹⁾ versus Temperature
8
µs
t_{d 7}
6
AED02479
t _dop
t _drp
5
4
3
0.8
2
0.6
1
0.4
-40 0 40 80 120 C 200
T_j
Delay Time¹⁾ versus Differential Field
6.0
µs
t _d ^5.9
5.8
AED02478
f = 10 kHz
5.7
5.6
5.5
t _dop
5.4
5.3
5.2
t _drp
5.1
5.0
0 2 4 6 8 mT 12
∆B
1) _{Switching points related to initial measurement}
@∆B = 2 mT, f = 200 Hz
0
-50 0 50 100 150 C 200
T_j
Rise and Fall Time versus Temperature
140
ns
t ₁₂₀
t_f
100
t_r
80
AED02480
60
40
20
0
-50 0 50 100 150 C 200
T_j
Semiconductor Group
15
1998-04-29