SLX24C04P Datasheet, PDF (12/27 Pages) Siemens Semiconductor Group – 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode

SLx 24C04/P
5.2 Page Write
Address Setting
Transmission of Data
Programming Cycle
The page write procedure is the same as the byte write
procedure up to the first data byte. In a page write instruction
however, entry of the EEPROM address byte EEA is followed
by a sequence of one to maximum sixteen data bytes with the
new data to be programmed. These bytes are transferred to
the internal page buffer of the EEPROM.
The first entered data byte will be stored according to the
EEPROM address n given by EEA (A0 to A7) and CSW (A8).
The internal address counter is incremented automatically
after the entered data byte has been acknowledged. The next
data byte is then stored at the next higher EEPROM address.
EEPROM addresses within the same page have common
page address bits A4 through A8. Only the respective four
least significant address bits A0 through A3 are incremented,
as all data bytes to be programmed simultaneously have to be
within the same page.
The master stops data entry by applying a STOP condition,
which also starts the internally timed erase/write cycle. In the
first step, all selected bytes are erased to “1”. With the next
internal step, the addressed bytes are written according to the
contents of the page buffer.
Those bytes of the page that have not been addressed are not included in the
programming.
Bus Activity
Master
S
T
A _{Command Byte EEPROM Address}
R
CSW
EEA n
T
Data Byte n
S
Data Byte n+1 Data Byte n+15 ^T
O
P
SDA Line S
0
P
Bus Activity
EEPROM
A
A
A
A
A
C
C
C
C
C
K
K
K
K
K
IED02140
Figure 8
Page Write Sequence
The erase/write cycle is finished latest after 8 ms. Acknowledge polling may be used for
speed enhancement in order to indicate the end of the erase/write cycle (refer to
chapter 5.3 Acknowledge Polling).
Semiconductor Group
12
1998-07-27