BTS770G Datasheet, PDF (12/17 Pages) Siemens Semiconductor Group – TrilithIC Quad switch driver

BTS 770 G
Electrical Characteristics (cont’d)
I_SH1 = I_SH2 = I_SL1 = I_SL2 = 0 A; – 40 °C < T_j < 150 °C; 8 V > V_S > 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Short Circuit of Highside Switch to V_S
OFF-state
examiner-voltage
V_EO
2
Output pull-down-resistor R_O
4
3
4
V
V_GH = 0 V
11 30 kΩ –
Open Circuit Detection of Highside Switch
Detection current
I_OCD
10 90
200 mA –
Switching Times of Highside Switch
Switch-ON-time;
to 90% V_SH
Switch-OFF-time;
to 10% V_SH
t_{ON_H}
–
t_{OFF_H}
–
0.2 0.4
0.15 0.4
ms resistive load
I_SH = 1 A; V_S = 12 V
ms resistive load
I_SH = 1 A; V_S = 12 V
Control Inputs of Highside Switches GH 1, 2
H-input voltage
L-input voltage
Input voltage hysterese
H-input current
L-input current
Input series resistance
Zener limit voltage
V_GHH
V_GHL
V_GHHY
I_GHH
I_GHL
R_I
V_GHZ
–
2.8 3.5 V –
1.5 2.3 –
V–
–
0.5 –
V–
20 60 90
1
25 50
2.5 3.5 6
µA V_GH = 5 V
µA V_GH = 0.4 V
kΩ –
5.4 –
–
V
I_GH = 1.6 mA
Status Flag Output ST of Highside Switch
Low output voltage
Leakage current
Zener-limit-voltage
V_STL
I_STLK
V_STZ
–
0.25 0.6 V I_ST = 1.6 mA
–
0.5 10 µA V_ST = 5 V
5.4 –
–
V I_ST = 1.6 mA
Semiconductor Group
12
1999-01-07