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HYB3164400AJ Datasheet, PDF (11/26 Pages) Siemens Semiconductor Group – 16M x 4-Bit Dynamic RAM | |||
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HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
AC Characteristics (contâd)(note: 6,7,8)
TA = 0 to 70 °C,VCC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60
Unit Note
min. max. min. max. min. max.
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle tPRWC 60 â
71 â
80 â
ns
time
CAS precharge to WE
tCPWD 40
â
48 â
55 â
ns
CAS-before-RAS Refresh Cycle
CAS setup time
tCSR
5
â
5
â
5
â
ns
CAS hold time
tCHR
5
â
5
â
10 â
ns
RAS to CAS precharge time
tRPC
0
â
0
â
0
â
ns
Write to RAS precharge time
tWRP
5
â
5
â
10 â
ns
Write hold time referenced to RAS tWRH 5
â
5
â
10 â
ns
Self Refresh Cycle (L-version only)
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k â
75 â
-50 â
100k â
90 â
-50 â
100k â
110 â
-50 â
ns 17
ns 17
ns 17
Test Mode Cycle
Write command setup time
Write command hold time
tWTS
5
tWTH
5
Capacitance
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A11,A12)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O4)
â
5
â
5
â
â
5
â
5
â
Symbol
CI1
CI2
CIO
Limit Values
min.
max.
â
5
â
7
â
7
ns 18
ns 18
Unit
pF
pF
pF
Semiconductor Group
11
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