TDA4605-3 Datasheet, PDF (10/20 Pages) Siemens Semiconductor Group – Control IC for Switched-Mode Power Supplies using MOS-Transistor

TDA 4605-3
Characteristics
T_A = 25 ˚C; V_S = 10 V
Parameter
Symbol
Limit Values
Unit
min. typ. max.
Test Condition
Test
Circuit
Start-Up Hysteresis
Start-up current drain I_6E0
0.6 0.8 mA V₆ = V_6E
1
Switch-on voltage
V_6E
11 12 13 V
1
Switch-off voltage
V_6A
4.5 5
5.5 V
1
Switch-on current
I_6E1
7
11
14
mA V₆ = V_6E
1
Switch-off current
I_6A1
5
10
13
mA V₆ = V_6A
1
Voltage Clamp (V₆ = 10 V, IC switched off)
At pin 2 (V₆ ≤ V_6E) V_{2 max} 5.6 6.6 8
V
I₂ = 1 mA
1
At pin 3 (V₆ ≤ V_6E) V_{3 max} 5.6 6.6 8
V
I₃ = 1 mA
1
Control Range
Control input voltage
Voltage gain of the
control circuit in the
control range
V_1R
– V_R
390 400 410 mV
2
30
43
60
dB
V_R = d
2
(V_2S – V_2B) / – dV₁
f = 1 kHz
Primary Current Simulation Voltage
Basic value
V_2B
0.97 1.00 1.03 V
Overload Range and Short-Circuit Operation
Peak value in the
V_2B
range of secondary
overload
2.9 3.0 3.1 V
Peak value in the
V_2K
range of secondary
short-circuit operation
2.2 2.4 2.6 V
2
V₁ = V_1R – 10 mV 2
V₁ = 0 V
2
Fold-Back Point Correction
Fold-back point
– I₂
300 500 650 µA V₃ = 3.7 V
1
correction current
Semiconductor Group
83