STL51007X Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – 1300 nm Laser in Receptacle Package, Low Power

1300 nm Laser in Receptacle Package,
Low Power
• Designed for application in fiber-optic networks
• Laser diode with Multi-Quantum Well structure
• Suitable for bit rates up to 1 Gbit/s
• Ternary photodiode at rear mirror for monitoring and
control of radiant power
• Hermetically sealed subcomponents, similar to TO 18
• SM Receptacle with 2- hole flange
STL 51007X
Type
STL 51007G
Ordering Code
Q62702-P3004
Connector/Flange
FC, 2-hole
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter
Symbol
Values
Unit
Module
Operating temperature range at case
T_C
Storage temperature range
T_stg
Soldering temperature
T_S
t_max = 10 s, 2 mm distance from bottom edge of
case
− 40 … + 85 °C
− 40 … + 85 °C
260
°C
Laser Diode
Direct forward current
Radiant power CW
Reverse voltage
Monitor Diode
I_{F max}
Φ_e
V_{R max}
120
mA
1
mW
2
V
Reverse voltage
V_{R max}
10
V
Semiconductor Group
1
02.95