SPD31N05 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor

SIPMOS ^® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
SPD31N05
SPU31N05
Pin 1
G
Pin 2
D
Pin 3
S
Type
SPD31N05
SPU31N05
V_DS
55 V
55 V
I_D
31 A
31 A
R_DS(on)
0.04 Ω
0.04 Ω
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
I_D = 31 A, V_DD = 25 V, R_GS = 25 Ω
L = 291 µH, T_j = 25 °C
Avalanche current,limited by T_jmax
Avalanche energy,periodic limited by T_jmax
Reverse diode dv/dt
I_S = 31 A, V_DS = 40 V, di_F/dt = 200 A/µs
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Package
P-TO252
P-TO251
Symbol
I_D
I_Dpuls
E_AS
I_AR
E_AR
dv/dt
V_GS
P_tot
Ordering Code
Q67040 - S4121 - A2
Q67040 - S4113 - A2
Values
31
22
124
140
31
7.5
6
± 20
75
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
30/Jan/1998