SPD02N60 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMO Power Transistor

SIPMOS^® Power Transistor
• N-Channel
• Enhancement mode
• Avalanche rated
Preliminary data
SPD02N60
SPU02N60
Type
SPD02N60
SPU02N60
V_DS I_D
600 V 2 A
Pin 1
G
R_DS(on)
5.5 Ω
@ VGS
V_GS = 10 V
Package
P-TO252
P-TO251
Pin 2
D
Pin 3
S
Ordering Code
Q67040-S4133
Q67040-S4127-A2
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current
IDpulse
T_C = 25 °C
Avalanche energy, single pulse
E_AS
I_D = 2 A, V_DD = 50 V, R_GS = 25 Ω,
T_j = 25 °C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C = 25 °C
Operating temperature
T_j
Storage temperature
T_stg
IEC climatic category; DIN IEC 68-1
Value
2
1.3
8
135
±20
55
-55 ... +150
-55 ... +150
55/150/56
Unit
A
mJ
V
W
°C
Semiconductor Group
1
10 / 1998