SFH6941 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – LOW CURRENT INPUT MINI OPTOCOUPLER

NEW
SFH6941
LOW CURRENT INPUT
MINI OPTOCOUPLER
Preliminary Data Sheet
FEATURES
• Transistor Optocoupler in SOT223 Package
• End Stackable, 1.27 mm Spacing
• Low Current Input
• Very High CTR, 150% Typical at I_F=1 mA,
V_CE=0.5V
• Good CTR Linearity Versus Forward Current
• Minor CTR Degradation
• Field Effect Stable by TRIOS®
(TRansparent IOn Shield)
• High Collector-Emitter Voltage, V_CEO=70 V
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Isolation Test Voltage: 2500 VDC
APPLICATIONS
• Telecommunication
• SMT
• PCMCIA
• Instrumentation
DESCRIPTION
The SFH6941 is a four channel mini-optocoupler suit-
able for high density packaged PCB application. It
has a minimum of 2500 VDC isolation from input to
output. The device consists of four phototransistors as
detectors. Each channel is individually controlled. The
optocoupler is housed in a SOT223 package. All the
cathodes of the input LEDs and all the collectors of
the output transistors are commoned enabling a pin
count reduction from 16 pins to 10 pins—a significant
space savings as compared to four channels that are
electrically isolated individually.
Package Dimensions in Inches (mm)
Anode 1 1
Anode 2 2
Common
Cathode
3
Anode 3 4
Anode 4 5
.287 (7.3)
.264 (6.6)
.145 (3.7)
.067 (1.7)
10°
typ.
.130 (3.3)
.059 (1.5)
.013 (.24)
.009 (.32)
15° max.
.020 (.5) min.
.016
+.004
– .002
(.4)
(+.1)
(–.05)
10 Emitter 1
9 Emitter 2
8
Common
Collector
7 Emitter 3
6 Emitter 4
.256 ±.008
(6.5 ±.2)
.050
(1.27)
.043 ±.020
(1.1 ±.5)
Absolute Maximum Ratings
Emitter(GaAlAs)
Reverse Voltage .................................................................................. 3 V
DC Forward Current ......................................................................... 5 mA
Surge Forward Current (t_P≤10 µs) ................................................ 100 mA
Total Power Dissipation ..................................................................10 mW
Detector (Si Phototransistor)
Collector-Emitter Voltage .................................................................. 70 V
Emitter-Collector Voltage ..................................................................... 7 V
Collector Current ............................................................................ 10 mA
Surge Collector Current (t_P<1 ms) ................................................. 20 mA
Total Power Dissipation ..................................................................20 mW
Package Insulation
Isolation Test Voltage (between emitter and detector,
refer to climate DIN 40046, part 2, Nov. 74) ......................... 2500 VDC
Creepage .................................................................................................≥4 mm
Clearance.................................................................................................≥4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 ...................................................175
Isolation Resistance
V_IO=100 V, T_A=25°C..................................................................≥10¹¹ Ω
V_IO=100 V, T_A=100°C................................................................≥10¹⁰ Ω
Storage Temperature Range ............................................. –55 to +150°C
Ambient Temperature Range............................................. –55 to +100°C
Junction Temperature ......................................................................100°C
Soldering Temperature (t=10 sec. max.)........................................260°C
Dip soldering plus reflow soldering processes
5–282