SFH640 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR 5.3 KV TRIOS HIGH BV CER VOLTAGE OPTOCOUPLER

FEATURES
• CTR at I_F=10 mA, V_CE=10 V
SFH640-1, 40-80%
SFH640-2, 63-125%
SFH640-3*, 100-200%
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• Very High Collector-Emitter Breakdown Volt-
age, BV_CER=300 V
• Isolation Test Voltage: 5300 VAC_RMS
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler
6 Pin DIP Package with Base Connection
• Field Effect Stable: TRIOS⁺
•
V
DE
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
DESCRIPTION
The SFH 640 is an optocoupler with very high
BVCER, a minimum of 300 volts. It is intended for
telecommunications applications or any DC appli-
cation requiring a high blocking voltage. The
SFH640 is a “better than” replacement for H11D1.
*Supplies from this group can't always be guranteed due
to unforseeable yield spread.
+_{TRIOS–TRansparent IOn Shield}
SFH 640
PHOTOTRANSISTOR
5.3 KV TRIOS^® HIGH BV_CER VOLTAGE
OPTOCOUPLER
Dimensions in inches (mm)
Pin One ID
321
Anode ₁
.248 (6.30)
.256 (6.50)
Cathode ₂
6 Base
5 Collector
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC ₃
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Maximum Ratings (T_A=25°C)
Emitter
Reverse Voltage ...................................................................................6 V
DC Forward Current ....................................................................... 60 mA
Surge Forward Current (tp≤10 µs) .................................................. 2.5 A
Total Power Dissipation ............................................................... 100 mW
Detector
Collector-Emitter Voltage ................................................................ 300 V
Collector-Base Voltage .....................................................................300 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current ........................................................................... 50 mA
Surge Collector Current (tp≤1 ms) ............................................... 100 mA
Total Power Dissipation ............................................................... 300 mW
Package
Isolation Test Voltage (between emitter and
detector, refer to climate DIN 40046 part 2
Nov. 74) ...................................................... 5300 VAC_RMS/7500 VAC_PK
Isolation Resistance
V_IO=500 V, T_A=25°C .........................................................................≥10¹² Ω
V_IO=500 V, T_A=100°C .......................................................................≥10¹¹ Ω
Insulation Thickness between Emitter and Detector .................. ≥0.4 mm
Creepage .................................................................................................≥7 mm
Clearance.................................................................................................≥7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ................................................... 175
Storage Temperature Range .......................................... -55°C to +150°C
Operating Temperature Range....................................... -55°C to +100°C
Junction Temperature......................................................................100°C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane≥1.5 mm) .............................................260°C
5–1