SFH636 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – HIGH SPEED 5.3 kV OPTOCOUPLER

SFH636
HIGH SPEED 5.3 kV OPTOCOUPLER
FEATURES
• High Speed Optocoupler without Base
Connection
• GaAlAs Emitter
• Integrated Detector with Photodiode and
Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• CTR at I_F=16 mA, V_O=0.4 V, V_CC=4.5 V,
T_A=25°C: ≥19%
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable by TRIOS^®
(TRansparent IOn Shield)
• Low Coupling Capacitance
• dV/dt: typ. 10 kV/µs
• Isolation Test Voltage: 5300 VAC_RMS
•
VDE 0884 Available with Option 1
• UL Approval, File #E52744
APPLICATIONS
• IGBT Drivers
• Data Communications
• Programmable Controllers
DESCRIPTION
The SFH636 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated pho-
todetector consisting of a photodiode and a high
speed transistor in a DIP-6 plastic package. The
device is functionally similar to 6N136 except there is
no base connection, and the electrical foot print is
different. Noise and dv/dt performance is enhanced
by not bringing out the base connection.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The
potential difference between the circuits to be cou-
pled should not exceed the maximum permissible
reference voltages.
Package Dimensions in Inches (mm)
Preliminary Data Sheet
.248 (6.30)
.256 (6.50)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
Pin One ID.
321
Cathode 1
Anode 2
4 56
.335 (8.50)
.343 (8.70)
NC ₃
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
6 VCC
5 Emitter
4 Collector
.110 (2.79)
.150 (3.81)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage............................................................................. 3 V
DC Forward Current..................................................................25 mA
Surge Forward Current ..................................................................1 A
tp≤1 µs, 300 pulses/sec.
Total Power Dissipation............................................................ 45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................. –0.5 to 30 V
Output Voltage ................................................................. –0.5 to 20 V
Output Current ............................................................................8 mA
Total Power Dissipation.......................................................... 100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector
(refer to climate DIN 40046, part 2, Nov. 74) ........... 5300 VAC_RMS
Creepage........................................................................... 7 mm min.
Clearance .......................................................................... 7 mm min.
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 ............................................ 175
Isolation Resistance
V_IO=500 V, T_A=25°C........................................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C......................................................... ≥10¹¹ Ω
Storage Temperature Range........................................ –55 to +150°C
Ambient Temperature Range....................................... –55 to +100°C
Junction Temperature ............................................................... 100°C
Soldering Temperature (t=10 sec. max.) ................................. 260°C
Dip soldering: distance to seating plane ≥1.5 mm
5–260