SFH6345 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – HIGH SPEED 5.3 kV OPTOCOUPLER

SFH6345
HIGH SPEED 5.3 kV OPTOCOUPLER
FEATURES
• Direct Replacement for HCPL4503
• High Speed Optocoupler without Base Connection
• GaAlAs Emitter
• Integrated Detector with Photodiode and Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• CTR at IF=16 mA, V_O=0.4 V, V_CC=4.5 V,
T_A=25°C: ≥19%
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable
• Low Coupling Capacitance
• Very High Common Mode Transient Immunity
dV/dt: ≥15 kV/µs at V_CM=1500 V
• Insulation Test Voltage: 5300 VAC_PK
•
•
V
DE
VDE
0884
Available
with
Option
1
• UL Approval, File #E52744
APPLICATIONS
• Data Communications
• IGBT Drivers
• Programmable Controllers
DESCRIPTION
The SFH6345 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated photode-
tector consisting of a photodiode and a high speed transis-
tor in a DIP-8 plastic package. The device is similar to the
6N135 but has an additional Faraday shield on the detector
which enhances the input-output dv/dt immunity.
Signals can be transmitted between two electrically sepa-
rated circuits up to frequencies of 2 MHz. The potential dif-
ference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
Package Dimensions in Inches (mm)
43 21
.268 (6.81)
.255 (6.48)
56 78
.390 (9.91)
.379 (9.63)
Pin
One
I.D.
NC 1
Anode 2
Cathode 3
NC 4
8 VCC
7 NC
6 Collector
5 Emitter
4°
Typ.
.022 (.56)
.018 (.46)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54)
Typ.
.305 typ.
(7.75) typ.
10 °
Typ.
3°–9° _{.012 (.30)}
.008 (.20)
.135 (3.43)
.115 (2.92)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage............................................................................ 3 V
DC Forward Current ................................................................25 mA
Surge Forward Current .................................................................1 A
tp≤1 µs, 300 pulses/sec.
Total Power Dissipation...........................................................45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage ................................................................ –0.5 to 30 V
Output Voltage .............................................................. –0.5 to ≥25 V
Output Current...........................................................................8 mA
Total Power Dissipation.........................................................100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector .....................................5300 VAC_PK
(refer to climate DIN 40046, part 2, Nov. 74)
Creepage........................................................................ ≥7 mm min.
Clearance ....................................................................... ≥7 mm min.
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 ......................................... ≥175
Isolation Resistance
V_IO=500 V, T_A=25°C, R_ISOL ............................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C, R_ISOL ............................................. ≥10¹¹ Ω
Storage Temperature Range ...................................... –55 to +150°C
Ambient Temperature Range...................................... –55 to +100°C
Junction Temperature .............................................................. 100°C
Soldering Temperature (t=10 sec. max.)................................. 260°C
Dip soldering: distance to seating plane ≥1.5 mm
5–279