SFH620AA Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – 5.3 kV TRIOS Optocoupler AC Voltage Input

SFH620AA/AGB
5.3 kV TRIOS^® Optocoupler
AC Voltage Input
FEATURES
• High Current Transfer Ratios
at 5 mA: 50–600%
at 1 mA: 45% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 VAC_RMS
• High Collector-Emitter Voltage, V_CEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
VDE 0884 Available with Option 1
• SMD Option, See SFH6206 Data Sheet
DESCRIPTION
The SFH620AA/AGB features a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sil-
icon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spac-
ing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V_RMS or DC.
Dimensions in Inches (mm)
21
pin one ID
.255 (6.48)
.268 (6.81)
Anode/
Cathode
1
4 Collector
34
Cathode/
Anode
2
3 Emitter
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
4°
typ.
.018 (.46)
.022 (.56)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
1.00 (2.54)
10 °
3°–9.°_{008 (.20)}
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
Maximum Ratings
Emitter
Reverse Voltage ..............................................................................± 60 mA
Surge Forward Current (t_P≤10 µs).....................................................± 2.5 A
Total Power Dissipation .................................................................. 100 mW
Detector
Collector-Emitter Voltage..................................................................... 70 V
Emitter-Collector Voltage........................................................................ 7 V
Collector Current ............................................................................... 50 mA
Collector Current (t_P≤1 ms) ............................................................. 100 mA
Total Power Dissipation .................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ................................................................... 5300 VAC_RMS
Creepage ......................................................................................... ≥7 mm
Clearance......................................................................................... ≥7 mm
Insulation Thickness between Emitter and Detector....................... 0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .................................................... 175
Isolation Resistance
V_IO=500 V, T_A=25°C ................................................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C ................................................................. ≥10¹¹ Ω
Storage Temperature Range ................................................ –55 to +150°C
Ambient Temperature Range ............................................... –55 to +100°C
Junction Temperature........................................................................ 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm) ............................................. 260°C
1