SFH620A Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPUT

FEATURES
• High Current Transfer Ratios
at 10 mA: 40–320%
at 1 mA: 45% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Isolation Test Voltage, 5300 VAC_RMS
• High Collector-Emitter Voltage, V_CEO=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
VDE 0884 Available with Option 1
• SMD Option, See SFH6206 Data Sheet
DESCRIPTION
The SFH620A features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4 pack-
age.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 V_RMS or DC.
Specifications subject to change.
SFH620A
5.3 kV TRIOS^® OPTOCOUPLER
AC VOLTAGE INPUT
Package Dimensions in Inches (mm)
21
.268 (6.81)
.255 (6.48)
Pin One I.D.
Anode/
Cathode
1
Cathode/
Anode
2
4 Collector
3 Emitter
34
.190 (4.83)
.179 (4.55)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
1.00 (2.54)
Typ.
.305
(7.75)
10 °
Typ.
3°–9° _{.012 (.30)}
.008 (.20)
.135 (3.43)
.115 (2.92)
Maximum Ratings
Emitter
Reverse Voltage ................................................................... 6 V
DC Forward Current ..................................................... ± 60 mA
Surge Forward Current (t_P≤10 µs) .................................. ± 2.5 A
Total Power Dissipation ................................................ 100 mW
Detector
Collector-Emitter Voltage ................................................... 70 V
Emitter-Collector Voltage ...................................................... 7 V
Collector Current .............................................................50 mA
Collector Current (t_P≤1 ms) ...........................................100 mA
Total Power Dissipation ................................................ 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ................................................. 5300 VAC_RMS
Creepage........................................................................ ≥7 mm
Clearance ....................................................................... ≥7 mm
Insulation Thickness between Emitter and Detector ... ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .................................. 175
Isolation Resistance
V_IO=500 V, T_A=25°C.................................................. ≥10¹² Ω
V_IO=500 V, T_A=100°C................................................ ≥10¹¹ Ω
Storage Temperature Range .............................. –55 to +150°C
Ambient Temperature Range.............................. –55 to +100°C
Junction Temperature ...................................................... 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm) ........................... 260°C
5–252