SFH608 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER

FEATURES
• Very High CTR at IF=1 mA, V_CE=0.5 V
- SFH608-2, 63-125%
- SFH608-3, 100-200%
- SFH608-4, 160-320%
- SFH608-5, 250-500%
• Specified Minimum CTR at I_F=0.5 mA,
V_CE=1.5 V: ≥ 32% (typ. 120%)
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• High Collector-Emitter Voltage V_CEO=55 V
• Isolation Test Voltage: 5300 VAC_RMS
• Low Current Input
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler in 6 Pin DIP
Package
• Field Effect Stable: TRIOS*
•
V
DE
VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
• Applications
- Telecommunications
- Industrial Controls
- Office Machines
- Microprocessor System Interfaces
DESCRIPTION
The SFH 608 is an optocoupler designed for high
current transfer ratio at low input currents with the
output transistor saturated. This makes the device
ideal for low current switching applications. The
SFH608 is packaged in a six pin plastic DIP.
*TRIOS—TRansparent IOn Shield
SFH 608
PHOTOTRANSISTOR, 5.3 KV, TRIOS^®
LOW CURRENT
OPTOCOUPLER
Dimensions in inches (mm)
Pin One ID
321
Anode ₁
.248 (6.30)
.256 (6.50)
Cathode ₂
6 Base
5 Collector
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC ₃
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Maximum Ratings (T_A=25°C)
Emitter
Reverse Voltage ...................................................................................6 V
DC Forward Current ........................................................................50 mA
Surge Forward Current (tp≤10 µs) ................................................... 2.5 A
Total Power Dissipation ................................................................. 70 mW
Detector
Collector-Emitter Voltage .................................................................. 55 V
Collector-Base Voltage .......................................................................55 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current ............................................................................ 50 mA
Surge Collector Current (tp≤1 ms) ................................................100 mA
Total Power Dissipation ............................................................... 150 mW
Isolation Test Voltage (between emitter and detector, refer
to climate DIN 40046 part 2 Nov. 74) (t=1 sec.).............. 5300 VAC_RMS
Creepage ................................................................................................. ≥7 mm
Clearance................................................................................................. ≥7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ................................................... 175
Isolation Resistance
V_IO=500 V, T_A=25°C ......................................................................... ≥10¹² Ω
V_IO=500 V, T_A=100°C.......................................................................≥10¹¹ Ω
Storage Temperature Range .......................................... -55°C to +150°C
Operating Temperature Range....................................... -55°C to +100°C
Junction Temperature......................................................................100°C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane≥1.5 mm) .............................................260°C
5–1