ILH100 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – HERMETIC PHOTOTRANSISTOR OPTOCOUPLER

ILH100
HERMETIC PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Operating Temperature Range,
–55°C to +125°C
• Current Transfer Ratio Guaranteed from
–55°C to +100°C Ambient Temperature Range
• High Current Transfer Ratio at Low Input Cur-
rent
• Isolation Test Voltage, 3000 VDC
• Base Lead Available for Transistor Biasing
• Standard 8 Pin DIP Package
DESCRIPTION
The ILH100 is designed especially for hi-rel applica-
tions requiring optical isolation with high current
transfer ratio and low saturation VCE. Each opto-
coupler consists of a light emitting diode and a NPN
silicon phototransistor mounted and coupled in an 8
pin hermetically sealed DIP package. The ILH100's
low input current makes it well suited for direct
CMOS to LSTTL/TTL interfaces.
Dimensions in inches (mm)
.390±.005
(9.91±.13)
87 6 5
Siemens
XXX XXXX
XXYY
.320
(8.13)
max.
.300
(7.62)
typ.
.020 ^{1 2}
3
4 ^.150
(3.81)
(.51)
max.
min.
.010±.002
(.25±.05)
2
Anode
.018±.002
(.46±.05)
.100 ±.010
(2.54±.25)
.125
(3.18)
min.
Cathode ³
7
Base
6
Collector
5
Emitter
Maximum Ratings
Emitter
Reverse Voltage ................................................................................6.0 V
Forward Current ..............................................................................60 mA
Peak Forward Current⁽¹⁾ ...................................................................... 1 A
Power Dissipation.........................................................................150 mW
Derate Linearly from 25°C ........................................................1.5 mW/°C
Detector
Collector–Emitter Voltage ...................................................................70 V
Emitter–Base Voltage ...........................................................................7 V
Collector–Base Voltage .....................................................................70 V
Continuous Collector Current ..........................................................50 mA
Power Dissipation.........................................................................300 mW
Derate Linearly from 25°C ........................................................3.0 mW/°C
Package
Input–Output Isolation Test Voltage⁽²⁾ ..................................... 3000 VDC
Storage Temperature Range ..........................................–65°C to +150°C
Operating Temperature Range..........................................–55 to +125°C
Junction Temperature...................................................................... 150°C
Soldering Time at 240°C, 1.6 mm from case ................................ 10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25°C ........................................................3.5 mW/°C
Notes:
1. Values applies for P_W≤1 ms, PRR£300 pps.
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. T_A=25°C and duration=1 second, RH=45%.
5–1