ILD615 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR OPTOCOUPLER

FEATURES
• Identical Channel to Channel Footprint
• Current Transfer Ratio (CTR) Range at
I_F=10 mA
ILD/Q615-1: 40 – 80% Min.
ILD/Q615-2: 63 – 125% Min.
ILD/Q615-3: 100 – 200% Min.
ILD/Q615-4: 160 – 320% Min.
• Guaranteed CTR at I_F=1 mA
ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
ILD/Q615-3: 34% Min.
ILD/Q615-4: 56% Min.
• High Collector-Emitter Voltage BV_CEO=70 V
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Isolation Test Voltage from Double Molded
Package, 5300 VAC_RMS
• UL Approval #E52744
• VDE #0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current .................................................1.5 A
Power Dissipation ...................................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage .................. 70 V
Emitter-Collector Reverse Voltage .................... 7 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms) .........................100 mA
Power Dissipation ...................................... 150 mW
Derate Linearly from 25°C........................ 2 mW/°C
Package
Storage Temperature................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
(2 mm distance from case bottom) ........... 260°C
Package Power Dissipation, ILD615.......... 400 mW
Derate Linearly from 25°C.................. 5.33 mW/°C
Package Power Dissipation, ILQ615 ......... 500 mW
Derate Linearly from 25°C................. 6.67 mW/°C
Isolation Test Voltage (t=1 sec.)........ 5300 VAC_RMS
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Isolation Resistance
V_IO=500 V, T_A=25°C ............................... ≥10¹² Ω
V_IO=500 V, T_A=100°C ............................. ≥10¹¹ Ω
DUAL CHANNEL ILD615
QUAD CHANNEL ILQ615
PHOTOTRANSISTOR OPTOCOUPLER
Dimensions in inches (mm)
4 3 2 1 ^{Pin One I.D.}
.268 (6.81)
.255 (6.48)
Anode ₁
Cathode ₂
56 78
.390 (9.91)
.379 (9.63)
Anode ₃
Cathode ₄
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
8 Collector
7 Emitter
6 Collector
5 Emitter
.305 Typ.
(7.75) Typ.
T4y^°p.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10° Typ.
.135 (3.43)
.115 (2.92)
3°–9°
.012 (.30)
.008 (.20)
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54) Typ.
Pin Anode 1
One
I.D. ^{Cathode 2}
Anode 3
Cathode 4
Anode 5
Cathode 6
Anode 7
Cathode 8
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
.150 (3.81)
.130 (3.30)
.305 Typ.
(7.75) Typ.
.040 (1.02)
.030 (.76 )
10° Typ.
.135 (3.43)
.115 (2.92)
3°–9°
.012 (.30)
.008 (.20)
DESCRIPTION
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con-
structed using over/under leadframe optical coupling and double molded
insulation technology resulting a Withstand Test Voltage of 7500 VAC_PEAK
and a Working Voltage of 1700 VAC_RMS.
The binned min./max. and linear CTR characteristics combined with the
TRIOS (TRansparent IOn Shield) field-effect process make these devices
well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran-
sients found in many industrial control environments.
Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at
an I_F=1 mA.
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
5–1