ILD32 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – PHOTODARLINGTON OPTOCOUPLER

FEATURES
• Very High Current Transfer Ratio, 500% Min.
• Isolation Test Voltage, 5300 VAC_RMS
• High Isolation Resistance, 10¹¹ Ω Typical
• Low Coupling Capacitance
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
• V VDE 0884 Available with Option 1
DE
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C.........................100 mW
Derate Linearly from 25°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage .............30 V
Collector (Load) Current..............................125 mA
Power Dissipation at 25°C Ambient ...........150 mW
Derate Linearly from 25°C......................2.0 mW/°C
Package
Isolation Test Voltage (between emitter
and detector refer to standard climate
23°C/50%RH, DIN 50014)
t=1 sec........................................... 5300 VAC_RMS
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ........................ ≥175
Isolation Resistance
V_IO=500V, T_A=25°C ......................... R_IO=10¹² Ω
V_IO=500V, T_A=100°C ....................... R_IO=10¹¹ Ω
Total Dissipation at 25°C Ambient
ILD32 .....................................................400 mW
ILQ32 .....................................................500 mW
Derate Linearly from 25°C
ILD32 ...............................................5.33 mW/°C
ILQ32 ...............................................6.67 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
DESCRIPTION
The ILD32/ILQ32 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be achieved
while maintaining a high degree of isolation
between driving and load circuits. These optocou-
plers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
The ILD32 has two isolated channels in a DIP pack-
age, and the ILQ32 has four channels. These
devices can be used to replace 4N32s or 4N33s in
applications calling for several single channel opto-
couplers on a board.
DUAL CHANNEL ILD32
QUAD CHANNEL ILQ32
PHOTODARLINGTON OPTOCOUPLER
Dimensions in inches (mm)
Dual
Channel
43
.268 (6.81)
.255 (6.48)
21
56
78
.390 (9.91)
.379 (9.63)
Pin One I.D.
Anode 1
Cathode 2
Cathode 3
Anode 4
8 Emitter
7 Collector
6 Collector
5 Emitter
4°
Typ.
Quad
Channel
.022 (.56)
.018 (.46)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.100 (2.54)
Typ.
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54)
Typ.
.305 typ.
(7.75) typ.
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin One I.D. ^{Anode 1}
Cathode 2
Cathode 3
Anode 4
Anode 5
Cathode 6
Cathode ⁷
Anode 8
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9 Emitter
.305 typ.
(7.75) typ.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.135 (3.43)
.115 (2.92)
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
Electrical Characteristics (T_A=25°C)
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V_F
Reverse Current
I_R
Capacitance
C_O
Detector
1.25 1.5 V
0.1 100 µA
25
pF
I_F=10 mA
V_R=3.0 V
V_R=0 V
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Collector
BV_CEO
30
BV_ECO
5
10
V
I_C=100 µA,
I_F=0
V
I_E=100 µA
Collector-Emitter
Leakage Current
Package
I_CEO
1.0 100 nA V_CE=10V,
I_F=0
Current Transfer Ratio
Collector Emitter
Saturation Voltage
Isolation Capacitance
Turn-On Time
Turn-Off Time
CTR
V_CEsat
C_ISOL
t_on
t_off
500
%
I_F=10 mA
1.0 V
I_C=2 mA,
I_F=8 mA
0.5
pF
15
µs
V_CC=10 V
30
µs
I_F=5 mA,
R_L=100 Ω
5–1