ILD223 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – DUAL PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

ILD223
DUAL PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• Two Channel Optocoupler
• High Current Transfer Ratio at I_F=1 mA,
500% Min.
• Isolation Test Voltage, 2500 VRMS
• Electrical Specifications Similar to Standard
6-pin Coupler
• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering
• Industry Standard SOIC-8 Surface Mountable
Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option (Conforms
to EIA Standard 481-2)
• Underwriters Lab File #E52744
DESCRIPTION
The ILD223 is a high current transfer ratio (CTR)
optocoupler. It has a Gallium Arsenide infrared LED
emitter and a silicon NPN photodarlington transis-
tor detector.
This device has CTRs tested at an LED current of
1 mA. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
The ILD223 is constructed in a standard SOIC-8
foot print which makes it ideally suited for high den-
sity applications. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1 µs, 300 pps) .................3 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25°C............................45 mW
Derate Linearly from 25°C......................0.4 mW/°C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Power Dissipation per Channel................... 75 mW
Derate Linearly from 25°C......................3.1 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(2 LEDs + 2 Detectors, 2 Channels).......240 mW
Derate Linearly from 25°C.........................2 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
.004 (.10)
.008 (.20)
Pin 1
Anode 1
CL
.154±.005
(3.91±.13)
Cathode
Anode
2
3
.016 (.41)
Cathode 4
.192±.005
(4.88±.13)
.015±.002
40°
(.38±.05)
8 Collector
7 Emitter
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.008 (.20)
.050 (1.27) Typ. _.020±.004
.040 (1.02)
(.15±.10)
2 Plcs.
5° Max.
R.010
(.25) Max.
.125±.005
(3.18±.13)
Lead
Coplanarity
±.001 (.04)
Max.
Characteristics (T_A=25°C)
Symbol Min. Typ. Max. Unit
Emitter
Forward Voltage V_F
Reverse Current I_R
Capacitance
C_O
1.3
V
0.1 100 µA
25
pF
Detector
Breakdown
Voltage
Collector-Emitter BV_CEO 30
Emitter-Collector BV_ECO 5
Current,
Collector-Emitter
I_CEO
V
V
50
nA
Capacitance,
C_CE
Collector-Emitter
3.4
pF
Package
DC Current
CTR_DC 500
%
Transfer Ratio
Saturation
Voltage,
Collector-Emitter
V_CEsat
1
V
Capacitance,
C_IO
0.5
pF
Input to Output
Resistance,
Input to Output
R_IO
100
GΩ
Turn-On Time
t_ON
15
µs
Turn-Off Time
t_OFF
30
µs
Isolation Test
V_IO
Voltage
Condition
I_F=1 mA
V_R=6.0 V
V_F=0 V,
F=1 MHz
I_C=10 mA
I_E=10 mA
V_CE=5 V,
I_F=0
V_CE=5 V
I_F=1 mA,
V_CE=5 V
I_F=1 mA,
I_CE=0.5 mA
V_CC=10 V
R_L=100Ω
I_F=5 mA
(t=1 min.)
2500 VAC_RMS
5–1