ILCT6 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – DUAL PHOTOTRANSISTOR OPTOCOUPLER

ILCT6
DUAL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Current Transfer Ratio, 50% Typical
• Leakage Current, 1 nA Typ.
• Two Isolated Channels Per Package
• Direct Replacement for MCT6
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option1
DESCRIPTION
The ILCT6 is a two channel opto isolator for high
density applications. Each channel consists of an
optically coupled pair with a gallium arsenide infra-
red LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmit-
ted by the device while maintaining a high degree
of electrical isolation between input and output.
The ILCT6 is especially designed for driving
medium-speed logic, where it may be used to elimi-
nate troublesome ground loop and noise problems.
It can also be used to replace relays and transform-
ers in many digital interface applications, as well as
analog applications such as CRT modulation.
Maximum Ratings
Emitter (each channel)
Rated Forward Current, DC...........................60 mA
Peak Forward Current, DC
(1 µs pulse, 300 pps)......................................3 A
Power Dissipation at 25°C Ambient ...........100 mW
Derate Linearly from 25°C......................1.3 mW/°C
Detector (each channel)
Collector Current ...........................................30 mA
Collector-Emitter Breakdown Voltage...............30 V
Power Dissipation at 25°C Ambient ...........150 mW
Derate Linearly from 25°C.........................2 mW/°C
Package
Isolation Test Voltage......................... 5300 VAC_RMS
Isolation Resistance
V_IO=500 V, T_A=25°C ............................... ≥10¹² Ω
V_IO=500 V, T_A=100°C ............................. ≥10¹¹ Ω
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Total Package Dissipation
at 25°C Ambient. ...................................400 mW
Derate Linearly from 25°C....................5.33 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Lead Soldering Time at 260°C ................... 10 sec.
Dimensions in inches (mm)
43
.268 (6.81)
.255 (6.48)
Pin One I.D.
21
Anode 1
Cathode 2
8 Emitter
7 Collector
56 78
.390 (9.91)
.379 (9.63)
Cathode 3
Anode 4
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
6 Collector
5 Emitter
.305 Typ.
(7.75) Typ.
4° Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10° Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Electrical Characteristics (T_A=25°C)
Sym-
bol
Min.
Emitter
Forward Voltage
V_F
Reverse Current
I_R
Junction
C_J
Capacitance
Detector
Breakdown Voltage,
Collector-Emitter
Emitter-Collector
Leakage Current,
Collector -Emitter
BV_CEO 30
BV_ECO 7.0
I_CEO
Capacitance
Collector-Emitter
C_CE
Package
DC Current
Transfer Ratio
CTR 20
Saturation Voltage,
Collector-Emitter
V_CEsat
Isolation
Capacitance
C_ISOL
Capacitance
between Channels
Typ.
1.25
0.1
25
65
10
1.0
8.0
50
0.5
0.4
Max. Unit
1.50 V
10
µA
pF
V
V
100 nA
pF
%
0.40 V
pF
pF
Condition
I_F=20 mA
V_R=3.0 V
V_F=0 V
I_C=10 µA
I_E=10 µA
V_CE=10 V
V_CE=0 V
I_F=10 mA,
V_CE=10 V
I_C=2.0 mA,
I_F=16 mA
f=1.0 MHz
f=1.0 MHz
Bandwidth
150
Switching Times,
t_on, t_off
3.0
Output Transistor
KHz I_C=2.0 mA,
V_CC=10 V,
R_L= 100 Ω
µs
I_C=2 mA,
R_E=100 Ω,
V_CE=10 V
5–1