IL755B Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLER

IL755B
BIDIRECTIONAL INPUT
DARLINGTON OPTOCOUPLER
FEATURES
• Very High Current Transfer Ratio (500% min.)
IL755B-1: 750% at I_F=2 mA, V_CE=5 V
IL755B-2: 1000% at I_F=1 mA, V_CE=5 V
• BV_CEO >60 V
• Isolation Test Voltage, 5300 VAC_RMS
• AC or Polarity Insensitive Inputs
• No Base Connection
• High Isolation Resistance, 10¹²â„¦
• Low Coupling Capacitance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
• VDE #0884 Available with Option 1
Dimensions in inches (mm)
321
.248 (6.30)
.256 (6.50)
4 56
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
pin one
ID.
Anode/
Cathode
1
Catho e/ ₂
Anode
NC 3
6 Base
5 Collector
4 Emitter
.130 (3.30)
.138 (3.50)
.300 (7.62)
Typ.
DESCRIPTION
The IL755B is a bidirectional input, optically cou-
pled isolator consisting of two Gallium Arsenide
infrared emitters and a silicon photodarlington sen-
sor.
4°
Typ.
.018 (0.45)
.022 (0.55)
.032 (0.80)
Min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
Maximum Ratings (at 25°C)
Electrical Characteristics (T_A=25°C)
Emitter (Drive Circuit)
Symbol Min. Typ.
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW Emitter
Derate Linearly from 55°C ....................1.33 mW/°C _{Forward Voltage(1)}
Detector
V_F
1.25
Collector-Emitter Breakdown Voltage ..............60 V ^Detector(2)
Emitter-Collector Breakdown Voltage ..............12 V
Power Dissipation at 25°C Ambient ...........200 mW
Breakdown Voltage,
Collector-Emitter
BV_CEO
60
75
Derate Linearly from 25°C......................2.6 mW/°C
Package
Isolation Test Voltage
Leakage Current,
I_CEO
1.0
Collector-Emitter
(PK), t=1 sec.................................. 5300 VAC_RMS
Dissipation at 25°C.....................................250 mW
Derate Linearly from 25°C⁽²⁾ .................3.3 mW/°C
Creepage ................................................ 7 min mm
Clearance................................................ 7 min mm
Package
Current Transfer
Ratio⁽²⁾
IL755B-1
CTR
750
Isolation Resistance
T_A=25°C.................................................. ≥10¹² Ω
T_A=100°C................................................ ≥10¹¹ Ω
Storage Temperature⁽²⁾ ..............–55°C to +150°C
Operating Temperature ................–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
IL755B-2
Saturation Voltage,
Collector-Emitter
Turn-On Time
V_CEsat
t_on
1000
18° Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.114(2.90)
.130 (3.30)
Max. Unit Condition
1.5
V
I_F=10 mA
V
I_C=1 mA,
I_F=0
100
nA
V_CE=10 V,
I_F=0
%
I_F=± 2 mA,
V_CE=5 V
%
I_F=± 1 mA,
V_CE=5 V
1.0
V
I_C=10 mA,
I_F=± 10 mA
200
µs
V_CC=10 V
Turn-Off Time
t_off
200
µs
I_F=± 2 mA,
R_L=100 Ω
Notes:
1. Indicates JEDEC registered data.
5–1