IL66B Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – PHOTODARLINGTON OPTOCOUPLER

IL66B
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Internal RBE for High Stability
• High Current Transfer Ratio
at I_F=2 mA, V_CE=5 V
IL66B-1, 200% min.
IL66B-2, 750% min.
• Withstand Test Voltage, 5300 VAC_RMS
• No Base Connection
• High Isolation Resistance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
• V VDE 0884 Available with Option 1
DE
DESCRIPTION
The IL66B is an optically coupled isolator employ-
ing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accom-
plished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
Maximum Ratings (at 25°C)
Emitter
Peak Reverse Voltage ........................................6 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage.............. 60 V
Emitter-Collector Breakdown Voltage................ 5 V
Power Dissipation at 25°C Ambient ...........200 mW
Derate Linearly from 25°C......................2.6 mW/°C
Package
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC_RMS
Isolation Resistance
V_IO=500 V, T_A=25°C ............................... ≥10¹² Ω
V_IO=500 V, T_A=100°C ............................. ≥10¹¹ Ω
Total Dissipation at 25°C ............................250 mW
Derate Linearly from 25°C......................3.3 mW/°C
Creepage Path ........................................ 7 min mm
Clearance Path........................................ 7 min mm
Storage Temperature....................–55°C to +150°C
Operating Temperature ................–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Dimensions in inches (mm)
321
.248 (6.30)
.256 (6.50)
4 56
.335 (8.50)
.343 (8.70)
pin one
ID.
Anode 1
Cathode 2
NC 3
6 NC
5 Collector
4 Emitter
.039
(1.00)
min.
.130 (3.30)
.138 (3.50)
.300 (7.62)
typ.
4°
typ.
.018 (0.45)
.022 (0.55)
.031 (0.80)
min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25) typ.
.300 (7.62)
.347 (8.82)
.114 (2.90)
.130 (3.30)
Electrical Characteristics (T_A=25°C)
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V_F
Reverse Current
I_R
Capacitance
C_O
Detector
1.25 1.5 V
0.01 100 µA
25
pF
I_F=10 mA
V_R=3.0 V
V_R=0 V
Breakdown Voltage
BV_CEO
60
Collector-Emitter
V
I_C=100 µA,
I_F=0
Leakage Current
Collector-Emitter
I_CEO
1.0
100 nA
V_CE=50 V,
I_F=0
Package
Current Transfer Ratio CTR
IL66B-1
IL66B-2
200
750 1000
I_F=2 mA,
V_CE=5 V
%
%
Saturation Voltage
Collector-Emitter
Turn-On,Turn-Off
Time
V_CEsat
t_on,t_off
1.0 V
200 µs
I_C=10 mA,
I_F=10 mA
V_CC=10 V
I_F=2 mA,
R_L=100 Ω
5–1
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