IL485 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER

IL485
OPTICALLY COUPLED
HIGH SPEED MOSFET DRIVERS
OPTOCOUPLER
FEATURES
• Fast Turn On
• Fast Turn Off
• Low Input Current
• Isolation Test Voltage, 5300 VAC_RMS
APPLICATIONS
• Motor Drive Controls
• IGBT-predrivers
• AC/DC Power Inverters
DESCRIPTION
The IL485 is a photovoltatic generator (optically cou-
pled) designed to drive highly capacitive loads such
as the gate of a power MOSFET transistor and at the
same time provide isolation and floating voltage sup-
ply capability. The coupler consists of a GaAlAs light
emitting diode as input control and a custom photo IC
chip with photodiode arrary (PDA) as output device.
When the LED is turned on, the emitted light pro-
duces a voltage in the PDA. The output of the PDA is
used to drive the gate of a power MOSFET. The photo
IC chip contains additional circuitry to enhance the
switching speeds, (both turn on turn off). The opto-
coupler is packaged in a 6 pin DIP.
Dimensions in inches (mm)
Pin One ID.
321
A1
.248 (6.30)
.256 (6.50)
K2
6 –out
5B
.039
(1.00)
Min.
4°
Typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
.130 (3.30)
.150 (3.81)
.020 (.051) Min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
3
.300 (7.62)
Typ.
18° Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
4 +out
.110 (2.79)
.150 (3.81)
Maximum Ratings
Emitter
Reverse Voltage ..................................................................................4 V
Forward Current ..............................................................................60 mA
Peak Forward Current....................................................................600 mA
Power Dissipation.........................................................................100 mW
Thermal Resistance....................................................................700 °C/W
Detector
Breakdown Voltage (pin 5 to 6) ........................................................300 V
Peak Input Current (pin 5 to 4) ........................................................50 mA
Reverse Current (pin 5 to 6, V=100 V) ...........................................200 nA
Power Dissipation (pin 5 to 4) ......................................................150 mW
Package
Insulation Thickness between Emitter and Detector ...................≥0.4 mm
Isolation Test Voltage (1 sec.)..............................................5300 VAC_RMS
Isolation Resistance
V_IO=500 V, T_A=25°C..................................................................≥10¹² Ω
V_IO=500 V, T_A=100°C...............................................................≥10¹¹ Ω
Comparative Tracking Index per
DIN IEC 112/VDE 303, Part 1.........................................................≥175
Total Power Dissipation ................................................................250 mW
Storage Temperature Range ..........................................–55°C to +150°C
Operating Temperature Range.......................................–55°C to +100°C
Junction Temperature ...................................................................... 100°C
Soldering Temperature (max. 10 sec.,
dip soldering distance to seating plane >1.5 mm)...................... 260°C
5–1