IL4216 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – TRIAC DRIVER OPTOCOUPLER

FEATURES
• High Input Sensitivity I_FT=1.3 mA
• 600/700/800 V Blocklng Voltage
• 300 mA On-State Current
• High Static dv/dt 10,000 V/µsec., typical
• Inverse Parallel SCRs Provide Commutating
dv/dt >10 KV/µsec
• Very Low Leakage <10 µA
• Isolation Test Voltage from Double Molded
Package 5300 VAC_RMS
• Package, 6-Pln DIP
• Underwriters Lab File #E52744
DESCRIPTION
The IL421x consists of an AlGaAs IRLED optically
coupled to a pair of photosensitive non-zero crossing
SCR chips and are connected inversely parallel to
form a TRIAC. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package,
using high insulation double molded, over/under lead-
frame construction.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of less than
1.3 mA (DC).
The IL421x uses two discrete SCRs resulting in a
commutating dv/dt of greater than 10KV/µs. The use
of a proprietary dv/dt clamp results in a static dv/dt of
greater than 10KV/µs. This clamp circuit has a MOS-
FET that is enhanced when high dv/dt spikes occur
between MT1 and MT2 of the TRIAC. The FET clamps
the base of the phototransistor when conducting, dis-
abling the internal SCR predriver.
The blocking voltage of up to 800 V permits control of
off-line voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as 380
VAC. Current handling capability is up to 300 mA
RMS, continuous at 25°C.
The IL421x isolates low-voltage logic from 120, 240,
and 380 VAC lines to control resistive inductive, or
capacitive loads including motors solenoids, high cur-
rent thyristors or TRIAC and relays.
Applications include solid-state relays, industrial con-
trols, office equipment, and consumer appliances.
600 V IL4216
700 V IL4217
800 V IL4218
TRIAC DRIVER OPTOCOUPLER
Dimensions in inches (mm)
.248 (6.30)
.256 (6.50)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
321
4 56
.335 (8.50)
.343 (8.70)
Pin One ID.
LED
Anode
1
LED
Cathode
2
NC 3
6
Triac
Anode 2
Substrate
5 do not
connect
4
Triac
Anode 1
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Maximum Ratings
Emitter
Reverse Voltage ...................................................................................6 V
Forward Current ..............................................................................60 mA
Surge Current ....................................................................................2.5 A
Power Dissipation.........................................................................100 mW
Derate Linearly from 25°C ......................................................1.33 mW/°C
Thermal Resistance....................................................................750 °C/W
Detector
Peak Off-State Voltage
IL4216...........................................................................................600 V
IL4217...........................................................................................700 V
IL4218...........................................................................................800 V
RMS On-State Current...................................................................300 mA
Single Cycle Surge...............................................................................3 A
Total Power Dissipation ................................................................500 mW
Derate Linearly from 25°C ........................................................6.6 mW/°C
Thermal Resistance.....................................................................150°C/W
Package
Isolation Test Voltage........................................................... 5300 VAC_RMS
Storage Temperature......................................................–55°C to +150°C
Operating Temperature ..................................................–55°C to +100°C
Lead Soldering Temperature................................................ 260°C/5 sec.
Isolation Resistance
V_IO=500 V, T_A=25°C ................................................................. ≥10¹² Ω
V_IO=500 V, T_A=100°C ............................................................... ≥10¹¹ Ω
5–1