IL400 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – PHOTO SCR OPTOCOUPLER

IL400
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (IFT), 5.0 mA Typical
• Gate Trigger Current (IGT), 20 µA
• Surge Anode Current, 1.0 Amp
• Blocking Voltage, 400 V
• Gate Trigger Voltage (VGT), 0.6 Volt
• Isolation Voltage, 5300 VAC_RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The IL400 is an optically coupled SCR with a Gallium
Arsenide infrared emitter and a silicon photo SCR
sensor. Switching can be achieved while maintaining
a high degree of isolation between triggering and load
circuits. The IL400 can be used in SCR triac and solid
state relay applications where high blocking voltages
and low input current sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ........................................ 6.0 V
Peak Forward Current
(100 µs, 1% Duty Cycle)..................................1.0 A
Continuous Forward Current .............................60 mA
Power Dissipation at 25°C .............................100 mW
Derate Linearly from 25°C..........................1.3 mW/°C
Detector
Reverse Gate Voltage .........................................6.0 V
Anode Voltage (DC or AC Peak) ........................400 V
Anode Current.................................................100 mA
Surge Anode Current (10 ms duration)...............1.0 A
Surge Gate Current (5 ms duration)................200 mA
Power Dissipation, 25°C ambient .................200 mW
Derate Linearly from 25°C........................2.11 mW/°C
Package
Isolation Voltage ....................................5300 VAC_RMS
Isolation Resistance
V_IO=500 V, T_A=25°C ............................. min. 10¹² Ω
V_IO=500 V, T_A=100°C ........................... min. 10¹¹ Ω
Total Package Dissipation ..............................250 mW
Derate Linearly from 25°C........................2.63 mW/°C
Operating Temperature ....................–55°C to +100°C
Storage Temperature........................–55°C to +150°C
Package Dimensions in Inches (mm)
Pin One ID.
321
Anode 1
.248 (6.30)
.256 (6.50)
Cathode 2
6 Gate
5 Anode
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC 3
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
4 Cathode
.110 (2.79)
.150 (3.81)
Characteristics (T_A=25°C)
Symbol _{Min. Typ. Max. Unit Condition}
Emitter
Forward Voltage
V_F
Reverse Voltage
V_R
Reverse Current
I_R
Detector
1.2 1.5 V I_F=20 mA
5.0
V I_R=10 µA
10 µA V_R=5 V
Forward Blocking
Voltage
V_DRM 400
Reverse Blocking
Voltage
V_DRRM 400
On-state Voltage
V_t
Holding Current
I_H
Gate Trigger
V_GT
0.6
Voltage
Forward Leakage
I_D
0.2
Current
Reverse Leakage I_R
0.2
Current
Gate Trigger Current I_GT
20
Package
V
V
1.2 V
500 µA
1.0 V
2.0 µA
2.0 µA
50 µA
R_GK=10 KΩ
T_A=100°C
I_d=150 µA
R_GK=10 KΩ
T_A=100°C
I_d=150 µA
I_T=100 mA
R_GK=27 KΩ
V_FX=50 V
V_FX=100 V
R_GK=27 KΩ
R_L=10 KΩ
R_GK=27 KΩ
V_RX=400 V
I_F=0, T_A=25°C
R_GK=27 KΩ
V_RX=400 V
I_F=0, T_A=25°C
V_FX=100 V
R_GK=27 KΩ,
R_L=10 KΩ
Turn-0n Current
I_FT
Isolation
Capacitance
0.5 5.0 10.0 mA V_FX=100 V
R_GK=27 KΩ
2 pF f=1 MHz
5–116