IL221AT Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

IL221AT/IL222AT/IL223AT
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio, I_F=1 mA,
IL221AT, 100% Minimum
IL222AT, 200% Minimum
IL223AT, 500% Minimum
• Withstand Test Voltage, 2500 VAC_RMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current
transfer ratio (CTR) optocoupler with a Gallium
Arsenide infrared LED emitter and a silicon NPN
photodarlington transistor detector.
This device has a CTR tested at an 1 mA LED
current. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard SOIC-
8 foot print which makes it ideally suited for high
density applications. In addition to eliminating
through-holes requirements, this package conforms
to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 5 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ........................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 240 mW
Derate Linearly from 25°C ........................... 3.3 mW/°C
Storage Temperature ......................... –55°C to +150°C
Operating Temperature ..................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.0±5.13)
.240
(6.10)
Pin One ID
Anode 1
CL
.154±.005
(3.9±1.13)
Cathode 2
NC 3
.016 (.41)
NC 4
.192±.005
(4.8±8.13)
.015±.002
40°
(.3±8.05)
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.4±9.13)
.004 (.10)
.008 (.20)
.125±.005
.008 (.20)
5° max.
(3.1±8.13)
.050 (1.27)
typ.
.040 (1.02)
.020±.004
(.1±5.10)
2 plcs.
R.010
Lead
(.25) max.Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (T_A=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
V_F
1.0
Reverse Current
I_R
0.1
Capacitance
C_O
25
Detector
Breakdown Voltage
Collector-Emitter
BV_CEO 30
Emitter-Collector
BV_ECO 5
Collector-Base Voltage BV_CBO 70
Collector-Emitter
Capacitance
Package
C_CE
3.4
DC Current Transfer
Ratio
IL221AT
CTR_DC
100
IL222AT
200
IL223AT
500
Collector-Emitter
Saturation Voltage
Isolation Test
V_{CE sat}
Voltage
Capacitance,
V_IO 2500
Input to Output
C_IO
0.5
Resistance,
Input to Output
R_IO
100
Specifications subject to change.
Max. Unit Condition
1.5 V
100 µA
pF
I_F=1mA
V_R=6.0 V
V_F=0 V,
F=1 MHz
V I_C=100 µA
V I_E=100 µA
I_C=10 µA
pF V_CE=10 V
I_F=1 mA,
V_CE=5 V
I_CE=0.5 mA,
1
V I_F=1 mA
VAC_RMS t=1 sec.
pF
GΩ
Semiconductor Group
4–10
10.95